Surface damage on polycrystalline $\beta$-SiC by xenon ion irradiation at high fluence

Abstract : Nano-grained $\beta$-silicon carbide ($\beta$-SiC) pellets were prepared by Spark Plasma Sintering (SPS). These were implanted at room temperature with 800 keV xenon at ion fluences of 5.10$^{15}$ and 1.10$^{17}$ cm$^{-2}$. Microstructural modifications were studied by electronic microscopy (TEM and SEM) and xenon profiles were determined by Rutherford Backscattering Spectroscopy (RBS). A complete amorphization of the implanted area associated with a significant oxidation is observed for the highest fluence. Large xenon bubbles formed in the oxide phase are responsible of surface swelling. No significant gas release has been measured up to 10$^{17}$ at.cm$^{-2}$. A model is proposed to explain the different steps of the oxidation process and xenon bubbles formation as a function of ion fluence.
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https://hal-cea.archives-ouvertes.fr/cea-01701709
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Soumis le : mardi 6 février 2018 - 09:26:29
Dernière modification le : mercredi 12 décembre 2018 - 15:27:52

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J. Baillet, S. Gavarini, N. Millard-Pinard, V. Garnier, C. Peaucelle, et al.. Surface damage on polycrystalline $\beta$-SiC by xenon ion irradiation at high fluence. Journal of Nuclear Materials, Elsevier, 2018, 503, pp.140-150. 〈https://www.sciencedirect.com/science/article/pii/S0022311517309637〉. 〈10.1016/j.jnucmat.2018.01.026〉. 〈cea-01701709〉

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