MOCVD Epitaxy and Characterization of III-As and III-P Thin Layers on 300mm Silicon Substrate

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MOCVD Epitaxy and Characterization of III-As and III-P Thin Layers on 300mm Silicon Substrate, 2015, San Francisco, California, Unknown or Invalid Region. 2015
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https://hal.archives-ouvertes.fr/hal-01489617
Contributeur : Laboratoire Inl <>
Soumis le : mardi 14 mars 2017 - 14:57:48
Dernière modification le : samedi 18 novembre 2017 - 12:30:09

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  • HAL Id : hal-01489617, version 1

Citation

M. Martin, R. Cipro, M. Billaud, J. Moeyaert, F. Bassani, et al.. MOCVD Epitaxy and Characterization of III-As and III-P Thin Layers on 300mm Silicon Substrate. MOCVD Epitaxy and Characterization of III-As and III-P Thin Layers on 300mm Silicon Substrate, 2015, San Francisco, California, Unknown or Invalid Region. 2015. 〈hal-01489617〉

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