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Helium ion-induced stoichiometry modification in hydrogenated silicon oxide films

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http://hal.in2p3.fr/in2p3-00000510
Contributor : Jocelyne Lorgeril <>
Submitted on : Monday, February 22, 1999 - 11:00:52 AM
Last modification on : Wednesday, September 16, 2020 - 4:06:21 PM

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  • HAL Id : in2p3-00000510, version 1

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C. Godet, R. Etamadi, C. Clerc. Helium ion-induced stoichiometry modification in hydrogenated silicon oxide films. Applied Physics Letters, American Institute of Physics, 1996, 69, pp.3845-3847. ⟨in2p3-00000510⟩

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