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Realization of Si$_{1-x-y}$Ge$_x$C$_y$/Si heterostructures by pulsed laser induced epitaxy of C$^+$ implanted pseudomorphic SiGe films and of a SiGeC:H films deposited on Si(100)

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http://hal.in2p3.fr/in2p3-00000644
Contributor : Jocelyne Lorgeril <>
Submitted on : Tuesday, March 2, 1999 - 11:11:17 AM
Last modification on : Wednesday, September 16, 2020 - 4:06:22 PM

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  • HAL Id : in2p3-00000644, version 1

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J. Boulmer, A. Desmur-Larre, C. Guedj, D. Debarre, P. Boucaud, et al.. Realization of Si$_{1-x-y}$Ge$_x$C$_y$/Si heterostructures by pulsed laser induced epitaxy of C$^+$ implanted pseudomorphic SiGe films and of a SiGeC:H films deposited on Si(100). Laser-Induced Thin Film Processing, Feb 1995, San Jose, United States. pp.367-372. ⟨in2p3-00000644⟩

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