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Ion-dose-dependent microstructure in amorphous Ge

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http://hal.in2p3.fr/in2p3-00005565
Contributor : Jocelyne Lorgeril Connect in order to contact the contributor
Submitted on : Monday, July 10, 2000 - 4:22:58 PM
Last modification on : Wednesday, February 17, 2021 - 3:26:04 PM

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  • HAL Id : in2p3-00005565, version 1

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M.C. Ridgway, C.J. Glover, K.M. Yu, G.J. Foran, C. Clerc, et al.. Ion-dose-dependent microstructure in amorphous Ge. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2000, 61, pp.12586-12589. ⟨in2p3-00005565⟩

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