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Submitted on : Friday, September 22, 2000 - 8:56:25 AM Last modification on : Thursday, April 23, 2020 - 2:26:14 PM
W.O. Adekoya, J.C. Muller, P. Siffert. Annealing kinetics during rapid and classical thermal processing of a laser induced defect in n-type silicon. Applied Physics Letters, American Institute of Physics, 1986, 49, pp.1429-1432. ⟨in2p3-00006151⟩