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Annealing kinetics during rapid and classical thermal processing of a laser induced defect in n-type silicon

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http://hal.in2p3.fr/in2p3-00006151
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Friday, September 22, 2000 - 8:56:25 AM
Last modification on : Thursday, April 23, 2020 - 2:26:14 PM

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  • HAL Id : in2p3-00006151, version 1

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W.O. Adekoya, J.C. Muller, P. Siffert. Annealing kinetics during rapid and classical thermal processing of a laser induced defect in n-type silicon. Applied Physics Letters, American Institute of Physics, 1986, 49, pp.1429-1432. ⟨in2p3-00006151⟩

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