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Passivation of laser induced defects in silicon by low energy hydrogen ion implantation

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http://hal.in2p3.fr/in2p3-00006155
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Friday, September 22, 2000 - 9:15:59 AM
Last modification on : Thursday, April 23, 2020 - 2:26:14 PM

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  • HAL Id : in2p3-00006155, version 1

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A. Slaoui, A. Barhdadi, J.C. Muller, P. Siffert. Passivation of laser induced defects in silicon by low energy hydrogen ion implantation. Applied physics. A, Materials science & processing, Springer Verlag, 1986, 39, pp.3184-3188. ⟨in2p3-00006155⟩

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