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UV laser incorporation of dopants into silicon: comparison of two processes

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http://hal.in2p3.fr/in2p3-00006482
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Tuesday, October 10, 2000 - 3:59:08 PM
Last modification on : Thursday, April 23, 2020 - 2:26:15 PM

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  • HAL Id : in2p3-00006482, version 1

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E. Fogarassy, D.H. Lowndes, J. Narayan, C.W. White. UV laser incorporation of dopants into silicon: comparison of two processes. Journal of Applied Physics, American Institute of Physics, 1985, 58, pp.2167. ⟨in2p3-00006482⟩

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