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Room temperature oxidation of ion bombarded silicon

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http://hal.in2p3.fr/in2p3-00006487
Contributor : Yvette Heyd <>
Submitted on : Tuesday, October 10, 2000 - 4:20:07 PM
Last modification on : Thursday, April 23, 2020 - 2:26:15 PM

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  • HAL Id : in2p3-00006487, version 1

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J.P. Ponpon. Room temperature oxidation of ion bombarded silicon. Surface Science, Elsevier, 1985, 162, pp.687. ⟨in2p3-00006487⟩

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