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Determination of the electron effective mass and relaxation time in heavily doped silicon

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http://hal.in2p3.fr/in2p3-00006494
Contributor : Yvette Heyd <>
Submitted on : Tuesday, October 10, 2000 - 4:38:10 PM
Last modification on : Thursday, April 23, 2020 - 2:26:15 PM

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  • HAL Id : in2p3-00006494, version 1

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A. Slaoui, P. Siffert. Determination of the electron effective mass and relaxation time in heavily doped silicon. physica status solidi (a), Wiley, 1985, 89, pp.617. ⟨in2p3-00006494⟩

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