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Formation of dislocations during high dose boron implantation into silicon

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http://hal.in2p3.fr/in2p3-00006571
Contributor : Yvette Heyd <>
Submitted on : Monday, October 16, 2000 - 8:52:37 AM
Last modification on : Thursday, April 23, 2020 - 2:26:15 PM

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  • HAL Id : in2p3-00006571, version 1

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J.J. Grob, P. Siffert. Formation of dislocations during high dose boron implantation into silicon. International Conference on Ion Beam Modification of Materials 3, Sep 1982, Grenoble, France. pp.413-419. ⟨in2p3-00006571⟩

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