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The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO$_2$ layers

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http://hal.in2p3.fr/in2p3-00006674
Contributor : Jocelyne Lorgeril Connect in order to contact the contributor
Submitted on : Thursday, October 19, 2000 - 4:44:26 PM
Last modification on : Wednesday, September 16, 2020 - 4:06:33 PM

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  • HAL Id : in2p3-00006674, version 1

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G.A. Kachurin, S.G. Yanovskaya, M.O. Ruault, A.K. Gutakovskii, K.S. Zhuravlev, et al.. The influence of irradiation and subsequent annealing on Si nanocrystals formed in SiO$_2$ layers. Semiconductors, 2000, 34, pp.965-970. ⟨in2p3-00006674⟩

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