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Reflectance of silicon surfaces after high dose rate molecular ion implantation

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http://hal.in2p3.fr/in2p3-00006689
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Friday, October 20, 2000 - 10:27:29 AM
Last modification on : Wednesday, February 17, 2021 - 11:50:25 AM

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  • HAL Id : in2p3-00006689, version 1

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M.O. Lampert, M. Hage-Ali, J.C. Muller, M. Toulemonde, P. Siffert. Reflectance of silicon surfaces after high dose rate molecular ion implantation. International Conference on Ion Beam Modification of Materials 2, Jul 1980, Albany, United States. pp.595-600. ⟨in2p3-00006689⟩

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