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Ion beam analysis of ternary silicides me-Si-N (Me = Re Ta Ti W) thin films used as diffusion barriers in advanced metallization

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http://hal.in2p3.fr/in2p3-00007487
Contributor : Sylvie Flores Connect in order to contact the contributor
Submitted on : Friday, November 20, 1998 - 11:20:42 AM
Last modification on : Friday, September 10, 2021 - 1:50:04 PM

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  • HAL Id : in2p3-00007487, version 1

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R. Somatri-Bouamrane, N. Chevarier, A. Chevarier, A.M. Dutron, E. Blanquet, et al.. Ion beam analysis of ternary silicides me-Si-N (Me = Re Ta Ti W) thin films used as diffusion barriers in advanced metallization. International Symposium on Chemical Vapor Deposition : CDV-XIV and EUROCVD11, Sep 1997, Paris, France. pp.1-8. ⟨in2p3-00007487⟩

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