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Phosphorous determination and secondary ion emission induced in silicon oxide by Ar ions of high (9 MeV) and low (30 keV) energy

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http://hal.in2p3.fr/in2p3-00008252
Contributor : Sylvie Flores Connect in order to contact the contributor
Submitted on : Tuesday, February 6, 2001 - 3:47:40 PM
Last modification on : Friday, September 10, 2021 - 1:50:04 PM

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  • HAL Id : in2p3-00008252, version 1

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H. Allali, B. Nsouli, J.-P. Thomas. Phosphorous determination and secondary ion emission induced in silicon oxide by Ar ions of high (9 MeV) and low (30 keV) energy. International Conference on Atomic Collisions in Solids 15, Jul 1993, Kingston, Canada. ⟨in2p3-00008252⟩

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