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Comparison of secondary ion emission induced in silicon oxide by MeV and keV ion bombardment

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http://hal.in2p3.fr/in2p3-00008261
Contributor : Sylvie Flores Connect in order to contact the contributor
Submitted on : Wednesday, February 7, 2001 - 4:11:46 PM
Last modification on : Friday, September 10, 2021 - 1:50:04 PM

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  • HAL Id : in2p3-00008261, version 1

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H. Allali, B. Nsouli, J.-P. Thomas, W. Szymczack, K. Wittmaack. Comparison of secondary ion emission induced in silicon oxide by MeV and keV ion bombardment. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 1994, 90, pp.501-504. ⟨in2p3-00008261⟩

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