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Measurement of branching ratios and lifetimes of levels in $^{30}$Si(from the $^{27}$Al($\alpha$,p, $\gamma$) reaction)

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http://hal.in2p3.fr/in2p3-00009047
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Tuesday, May 15, 2001 - 4:22:16 PM
Last modification on : Wednesday, February 17, 2021 - 11:50:41 AM

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  • HAL Id : in2p3-00009047, version 1

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A. Gallmann, F. Haas, M. Toulemonde. Measurement of branching ratios and lifetimes of levels in $^{30}$Si(from the $^{27}$Al($\alpha$,p, $\gamma$) reaction). Canadian Journal of Physics, NRC Research Press, 1972, 50, pp.278-286. ⟨in2p3-00009047⟩

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