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Interactions of point defects and impurities with open volume defects in silicon

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http://hal.in2p3.fr/in2p3-00011468
Contributor : Jocelyne Lorgeril Connect in order to contact the contributor
Submitted on : Tuesday, April 30, 2002 - 9:52:34 AM
Last modification on : Wednesday, September 16, 2020 - 4:06:34 PM

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  • HAL Id : in2p3-00011468, version 1

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J.S. Williams, M.C. Ridgway, M.J. Conway, J. Wong Leung, B.C. Williams, et al.. Interactions of point defects and impurities with open volume defects in silicon. Ion Beam Synthesis and Processing of Advanced Materials, Nov 2000, Boston, United States. ⟨in2p3-00011468⟩

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