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Silicon nanocrystal formation upon annealing of SiO$_2$ layers implanted with Si ions

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http://hal.in2p3.fr/in2p3-00011893
Contributor : Jocelyne Lorgeril Connect in order to contact the contributor
Submitted on : Monday, September 16, 2002 - 3:56:15 PM
Last modification on : Wednesday, September 16, 2020 - 4:06:35 PM

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  • HAL Id : in2p3-00011893, version 1

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G.A. Kachurin, S.G. Yanovskaya, V.A. Volodin, V.G. Kesler, A.F. Leier, et al.. Silicon nanocrystal formation upon annealing of SiO$_2$ layers implanted with Si ions. Semiconductors, 2002, 36, pp.647-651. ⟨in2p3-00011893⟩

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