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Electrical characteristics of silicon pixel detectors

Abstract : Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.
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http://hal.in2p3.fr/in2p3-00012423
Contributor : Magali Damoiseaux Connect in order to contact the contributor
Submitted on : Tuesday, January 14, 2003 - 3:46:43 PM
Last modification on : Monday, March 29, 2021 - 3:22:09 PM

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  • HAL Id : in2p3-00012423, version 1

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I. Gorelov, G. Gorfine, M. Hoeferkamp, V. Mata-Bruni, G. Santistevan, et al.. Electrical characteristics of silicon pixel detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier, 2002, 489, pp.202-217. ⟨in2p3-00012423⟩

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