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Exciton-erbium coupling in SiO$_x$ suboxide films prepared by combining sol-gel chemistry and ion implantation

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http://hal.in2p3.fr/in2p3-00012844
Contributor : Jocelyne Lorgeril Connect in order to contact the contributor
Submitted on : Thursday, June 5, 2003 - 3:48:34 PM
Last modification on : Wednesday, September 16, 2020 - 4:06:35 PM

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  • HAL Id : in2p3-00012844, version 1

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J.C. Pivin, M. Jimenez de Castro, H. Hofmeister, M. Sendova-Vassileva. Exciton-erbium coupling in SiO$_x$ suboxide films prepared by combining sol-gel chemistry and ion implantation. Materials Science and Engineering, Elsevier, 2003, B97, pp.13-19. ⟨in2p3-00012844⟩

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