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The 3-D profiling of B ions implanted into Si

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http://hal.in2p3.fr/in2p3-00012988
Contributor : Jocelyne Lorgeril <>
Submitted on : Wednesday, February 24, 1999 - 3:50:28 PM
Last modification on : Wednesday, September 16, 2020 - 4:06:35 PM

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  • HAL Id : in2p3-00012988, version 1

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S.T. Nakagawa, L. Thome, H. Saito, C. Clerc. The 3-D profiling of B ions implanted into Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 1997, 121, pp.36-39. ⟨in2p3-00012988⟩

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