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Conference papers

Formation of epitaxial NiO by oxygen implantation in [100] Ni

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http://hal.in2p3.fr/in2p3-00013173
Contributor : Jocelyne Lorgeril Connect in order to contact the contributor
Submitted on : Monday, April 12, 1999 - 3:53:02 PM
Last modification on : Wednesday, September 16, 2020 - 4:06:35 PM

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  • HAL Id : in2p3-00013173, version 1

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M.M. Tosic, A.V. Drigo, C. Cohen, L. Thome, J. Chaumont, et al.. Formation of epitaxial NiO by oxygen implantation in [100] Ni. International Conference on Ion Beam Modification of Materials 2, Jul 1980, Albany, United States. pp.303-313. ⟨in2p3-00013173⟩

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