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Study of surface roughening of tensily strained Si$_{1-x-y}$Ge$_x$C$_y$ films grown by ultra high vacuum-chemical vapor deposition

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http://hal.in2p3.fr/in2p3-00013771
Contributor : Jocelyne Lorgeril Connect in order to contact the contributor
Submitted on : Monday, June 30, 2003 - 2:51:45 PM
Last modification on : Wednesday, September 16, 2020 - 4:06:41 PM

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  • HAL Id : in2p3-00013771, version 1

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C. Calmes, D. Bouchier, D. Debarre, V. Le Thanh, C. Clerc. Study of surface roughening of tensily strained Si$_{1-x-y}$Ge$_x$C$_y$ films grown by ultra high vacuum-chemical vapor deposition. Thin Solid Films, Elsevier, 2003, 428, pp.150-155. ⟨in2p3-00013771⟩

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