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Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics

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http://hal.in2p3.fr/in2p3-00013841
Contributor : Magali Damoiseaux <>
Submitted on : Friday, July 18, 2003 - 10:53:12 AM
Last modification on : Tuesday, March 30, 2021 - 3:18:55 AM

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  • HAL Id : in2p3-00013841, version 1

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M. Dentan, E. Delagnes, N. Fourches, M. Rouger, M.C. Habrard, et al.. Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 1993, 40, pp.1555-1560. ⟨in2p3-00013841⟩

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