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Journal articles
Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics
M. Dentan
E. Delagnes
N. Fourches
M. Rouger
M.C. Habrard
1
L. Blanquart
1
P. Delpierre
1
R. Potheau
1
R. Truche
J.P. Blanc
E. Delevoye
J. Gautier
J.L. Pelloie
J. de Pontcharra
O. Flament
J.L. Leray
J.L. Martin
J. Montaron
O. Musseau
1
CPPM - Centre de Physique des Particules de Marseille (163, avenue de Luminy - Case 902 - 13288 Marseille cedex 09 - France)
- AMU - Aix Marseille Université : UMR7346 / UMR6550 / UMR6450 / URA6450 (Aix-Marseille Université Jardins du Pharo 58 Boulevard Charles Livon 13284 Marseille cedex 7 - France)
- IN2P3 - Institut National de Physique Nucléaire et de Physique des Particules du CNRS (France)
- CNRS - Centre National de la Recherche Scientifique : UMR7346 / UMR6550 / UMR6450 / URA6450 (France)
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Journal articles
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http://hal.in2p3.fr/in2p3-00013841
Contributor : Magali Damoiseaux <>
Submitted on : Friday, July 18, 2003 - 10:53:12 AM
Last modification on : Tuesday, March 30, 2021 - 3:18:55 AM
Contributor : Magali Damoiseaux <>
Submitted on : Friday, July 18, 2003 - 10:53:12 AM
Last modification on : Tuesday, March 30, 2021 - 3:18:55 AM
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- HAL Id : in2p3-00013841, version 1
Citation
M. Dentan, E. Delagnes, N. Fourches, M. Rouger, M.C. Habrard, et al.. Study of a CMOS-JFET-bipolar radiation hard analog-digital technology suitable for high energy physics electronics. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 1993, 40, pp.1555-1560. ⟨in2p3-00013841⟩
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