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Study of proton radiation effects on analog IC designed for high energy physics in a BiCMOS-JFET radhard SOI technology

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http://hal.in2p3.fr/in2p3-00013842
Contributor : Magali Damoiseaux Connect in order to contact the contributor
Submitted on : Friday, July 18, 2003 - 10:56:28 AM
Last modification on : Tuesday, October 19, 2021 - 10:50:11 PM

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  • HAL Id : in2p3-00013842, version 1

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L. Blanquart, P. Delpierre, M.C. Habrard, A. Mekkaoui, T. Mouthuy, et al.. Study of proton radiation effects on analog IC designed for high energy physics in a BiCMOS-JFET radhard SOI technology. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 1994, 41, pp.2525-2529. ⟨in2p3-00013842⟩

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