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In-situ microscopy study of nanocavity shrinkage in Si under ion beam irradiation

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http://hal.in2p3.fr/in2p3-00014207
Contributor : Jocelyne Lorgeril Connect in order to contact the contributor
Submitted on : Tuesday, December 9, 2003 - 2:54:51 PM
Last modification on : Thursday, February 4, 2021 - 3:56:04 PM

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  • HAL Id : in2p3-00014207, version 1

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M.-O. Ruault, M.C. Ridgway, F. Fortuna, H. Bernas, J.S. Williams. In-situ microscopy study of nanocavity shrinkage in Si under ion beam irradiation. International workshop Semiconductor defect engineering progress and prospects, Mar 2002, Orleans, France. pp.39-40. ⟨in2p3-00014207⟩

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