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Gain stability of Microstrip Gas chambers with high resistivity substrates

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http://hal.in2p3.fr/in2p3-00015199
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Wednesday, March 29, 2000 - 4:48:01 PM
Last modification on : Thursday, April 23, 2020 - 2:26:18 PM

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  • HAL Id : in2p3-00015199, version 1

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R. Fang, W. Geist, J.M. Brom, J.L. Riester. Gain stability of Microstrip Gas chambers with high resistivity substrates. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier, 1996, 378, pp.439. ⟨in2p3-00015199⟩

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