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Donor-acceptor charge transfers in bulk semi-insulating GaAs as revealed by photo-epr

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http://hal.in2p3.fr/in2p3-00015890
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Tuesday, May 30, 2000 - 3:32:55 PM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00015890, version 1

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T. Benchiguer, E. Christophel, A. Goltzene, B. Mari, B. Meyer, et al.. Donor-acceptor charge transfers in bulk semi-insulating GaAs as revealed by photo-epr. Applied Surface Science, Elsevier, 1991, 50, pp.277-280. ⟨in2p3-00015890⟩

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