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Free-carrier concentration in n-doped inp crystals determined by raman scattering measurements

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http://hal.in2p3.fr/in2p3-00015902
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Tuesday, May 30, 2000 - 5:23:53 PM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00015902, version 1

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B. Boudart, B. Prevot, C. Schwab. Free-carrier concentration in n-doped inp crystals determined by raman scattering measurements. Applied Surface Science, Elsevier, 1991, 50, pp.295-299. ⟨in2p3-00015902⟩

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