HAL will be down for maintenance from Friday, June 10 at 4pm through Monday, June 13 at 9am. More information
Skip to Main content Skip to Navigation
Journal articles

Properties of Silicon dioxide films prepared by pulsed-laser ablation

A. Slaoui 1 E. Fogarassy 1 C. Fuchs 1 P. Siffert 1
1 IReS - Institut de Recherches Subatomiques
Document type :
Journal articles
Complete list of metadata
http://hal.in2p3.fr/in2p3-00016011
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Tuesday, June 6, 2000 - 2:21:47 PM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

Identifiers

  • HAL Id : in2p3-00016011, version 1

Collections

CNRS | CGE | IN2P3 | SITE-ALSACE

Citation

A. Slaoui, E. Fogarassy, C. Fuchs, P. Siffert. Properties of Silicon dioxide films prepared by pulsed-laser ablation. Journal of Applied Physics, American Institute of Physics, 1992, 71, pp.590-596. ⟨in2p3-00016011⟩

Export

BibTeX TEI DC DCterms EndNote Datacite

Share

Metrics

Record views

7