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Properties of Silicon dioxide films prepared by pulsed-laser ablation

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http://hal.in2p3.fr/in2p3-00016011
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Tuesday, June 6, 2000 - 2:21:47 PM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00016011, version 1

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A. Slaoui, E. Fogarassy, C. Fuchs, P. Siffert. Properties of Silicon dioxide films prepared by pulsed-laser ablation. Journal of Applied Physics, American Institute of Physics, 1992, 71, pp.590-596. ⟨in2p3-00016011⟩

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