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Charge transfer as an alternative to metastability of defects in semi-insulating GaAs

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http://hal.in2p3.fr/in2p3-00016042
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Wednesday, June 7, 2000 - 8:28:06 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00016042, version 1

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T. Benchiguer, E. Christophel, A. Goltzene, B. Mari, B. Meyer, et al.. Charge transfer as an alternative to metastability of defects in semi-insulating GaAs. Japanese Journal of Applied Physics, Japan Society of Applied Physics, 1990, 29, pp.L1569. ⟨in2p3-00016042⟩

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