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Rapid thermal process-induced recombination centers in ion implanted silicon

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http://hal.in2p3.fr/in2p3-00016043
Contributor : Yvette Heyd <>
Submitted on : Wednesday, June 7, 2000 - 8:32:35 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00016043, version 1

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W. Eichhammer, M. Hage-Ali, R. Stuck, P. Siffert. Rapid thermal process-induced recombination centers in ion implanted silicon. Applied physics. A, Materials science & processing, Springer Verlag, 1990, 50, pp.405. ⟨in2p3-00016043⟩

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