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EPR evidence for As interstitial-related defects in semi-insulating GaAs

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http://hal.in2p3.fr/in2p3-00016047
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Wednesday, June 7, 2000 - 9:04:24 AM
Last modification on : Wednesday, February 17, 2021 - 3:26:04 PM

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  • HAL Id : in2p3-00016047, version 1

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E. Christophel, T. Benchiguer, A. Goltzene, C. Schwab, Guangyou Wang, et al.. EPR evidence for As interstitial-related defects in semi-insulating GaAs. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1990, 42, pp.3461. ⟨in2p3-00016047⟩

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