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Si implantation of GaAs at low and medium doses: Raman assessment of dopant activation

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http://hal.in2p3.fr/in2p3-00016156
Contributor : Yvette Heyd <>
Submitted on : Thursday, June 29, 2000 - 8:04:16 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00016156, version 1

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S. Zekeng, B. Prevot, C. Schwab. Si implantation of GaAs at low and medium doses: Raman assessment of dopant activation. Materials Science and Engineering, Elsevier, 1990, B5, pp.269. ⟨in2p3-00016156⟩

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