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Excimer laser induced doping of phosphorus into silicon

A. Slaoui 1 F. Foulon P. Siffert 1
1 IReS - Institut de Recherches Subatomiques
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Journal articles
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http://hal.in2p3.fr/in2p3-00016161
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Thursday, June 29, 2000 - 8:24:18 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00016161, version 1

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A. Slaoui, F. Foulon, P. Siffert. Excimer laser induced doping of phosphorus into silicon. Journal of Applied Physics, American Institute of Physics, 1990, 67, pp.6197. ⟨in2p3-00016161⟩

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