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Boron doping of silicon by excimer laser irradiation in a reactive atmosphere. The incorporation mechanism

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http://hal.in2p3.fr/in2p3-00016162
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Thursday, June 29, 2000 - 8:30:59 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00016162, version 1

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A. Slaoui, F. Foulon, R. Stuck, P. Siffert. Boron doping of silicon by excimer laser irradiation in a reactive atmosphere. The incorporation mechanism. Applied physics. A, Materials science & processing, Springer Verlag, 1990, 50, pp.479. ⟨in2p3-00016162⟩

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