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Charge state dependent iron precipitation in silicon

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http://hal.in2p3.fr/in2p3-00016166
Contributor : Yvette Heyd <>
Submitted on : Thursday, June 29, 2000 - 9:11:36 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00016166, version 1

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A. Mesli, T. Heiser, M. Amroun, P. Siffert. Charge state dependent iron precipitation in silicon. Applied Physics Letters, American Institute of Physics, 1990, 57, pp.1898. ⟨in2p3-00016166⟩

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