HAL will be down for maintenance from Friday, June 10 at 4pm through Monday, June 13 at 9am. More information
Skip to Main content Skip to Navigation
Journal articles

Improvement of plasma deposited a-Ge: H thin films by hydrogen dilution of germane

C. Godet I. Elzawawi M.L. Theye Mélanie Gauthier J.P. Stoquert 1
1 IReS - Institut de Recherches Subatomiques
Document type :
Journal articles
Complete list of metadata
http://hal.in2p3.fr/in2p3-00016177
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Friday, June 30, 2000 - 4:10:24 PM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

Identifiers

  • HAL Id : in2p3-00016177, version 1

Collections

CNRS | CGE | IN2P3 | SITE-ALSACE

Citation

C. Godet, I. Elzawawi, M.L. Theye, Mélanie Gauthier, J.P. Stoquert. Improvement of plasma deposited a-Ge: H thin films by hydrogen dilution of germane. Solid State Communications, Elsevier, 1990, 74, pp.721. ⟨in2p3-00016177⟩

Export

BibTeX TEI DC DCterms EndNote Datacite

Share

Metrics

Record views

29