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Improvement of plasma deposited a-Ge: H thin films by hydrogen dilution of germane

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http://hal.in2p3.fr/in2p3-00016177
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Friday, June 30, 2000 - 4:10:24 PM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00016177, version 1

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C. Godet, I. Elzawawi, M.L. Theye, Mélanie Gauthier, J.P. Stoquert. Improvement of plasma deposited a-Ge: H thin films by hydrogen dilution of germane. Solid State Communications, Elsevier, 1990, 74, pp.721. ⟨in2p3-00016177⟩

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