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Electrically active defects in silicon after excimer laser processing

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http://hal.in2p3.fr/in2p3-00016212
Contributor : Yvette Heyd <>
Submitted on : Tuesday, July 4, 2000 - 10:20:37 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00016212, version 1

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B. Hartiti, A. Slaoui, J.C. Muller, P. Siffert. Electrically active defects in silicon after excimer laser processing. Journal of Applied Physics, American Institute of Physics, 1989, 66, pp.3934. ⟨in2p3-00016212⟩

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