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Persistent photquenching and anion antisite defects in neutron-irradiated GaAs

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http://hal.in2p3.fr/in2p3-00016214
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Tuesday, July 4, 2000 - 10:32:11 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00016214, version 1

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A. Goltzene, B. Meyer, C. Schwab. Persistent photquenching and anion antisite defects in neutron-irradiated GaAs. Applied Physics Letters, American Institute of Physics, 1989, 54, pp.907. ⟨in2p3-00016214⟩

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