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Optimization of the parameters involved in the photochemical doping of Si with a pulsed ArF excimer laser

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http://hal.in2p3.fr/in2p3-00016215
Contributor : Yvette Heyd <>
Submitted on : Tuesday, July 4, 2000 - 10:37:07 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00016215, version 1

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F. Foulon, A. Slaoui, E. Fogarassy, R. Stuck, C. Fuchs, et al.. Optimization of the parameters involved in the photochemical doping of Si with a pulsed ArF excimer laser. Applied Surface Science, Elsevier, 1989, 36, pp.384. ⟨in2p3-00016215⟩

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