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Annealing behavior of strain-induced anion-antisites in semi-insulating GaAs

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http://hal.in2p3.fr/in2p3-00016223
Contributor : Yvette Heyd <>
Submitted on : Tuesday, July 4, 2000 - 3:10:12 PM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00016223, version 1

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G. Benakki, E. Christoffel, A. Goltzene, C. Schwab, Wang Guangyu, et al.. Annealing behavior of strain-induced anion-antisites in semi-insulating GaAs. Journal of Applied Physics, American Institute of Physics, 1989, 66, pp.2651. ⟨in2p3-00016223⟩

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