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Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laser

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http://hal.in2p3.fr/in2p3-00016236
Contributor : Yvette Heyd <>
Submitted on : Tuesday, July 4, 2000 - 4:08:21 PM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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F. Foulon, E. Fogarassy, A. Slaoui, C. Fuchs, S. de Unamuno, et al.. Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laser. Applied physics. A, Materials science & processing, Springer Verlag, 1988, 45, pp.361. ⟨in2p3-00016236⟩

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