HAL will be down for maintenance from Friday, June 10 at 4pm through Monday, June 13 at 9am. More information
Skip to Main content Skip to Navigation
Journal articles

16 MeV-electron-induced defects in iron-doped indium phosphide

Document type :
Journal articles
Complete list of metadata

http://hal.in2p3.fr/in2p3-00016662
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Thursday, August 31, 2000 - 10:17:51 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

Identifiers

  • HAL Id : in2p3-00016662, version 1

Collections

Citation

M. Kamta, C. Schwab, S. Domngang, J.P. Engel. 16 MeV-electron-induced defects in iron-doped indium phosphide. Journal of Applied Physics, American Institute of Physics, 1998, 84, pp.4273-4280. ⟨in2p3-00016662⟩

Share

Metrics

Record views

3