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Journal articles

16 MeV-electron-induced defects in iron-doped indium phosphide

M. Kamta C. Schwab S. Domngang J.P. Engel 1
1 IReS - Institut de Recherches Subatomiques
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http://hal.in2p3.fr/in2p3-00016662
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Thursday, August 31, 2000 - 10:17:51 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00016662, version 1

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M. Kamta, C. Schwab, S. Domngang, J.P. Engel. 16 MeV-electron-induced defects in iron-doped indium phosphide. Journal of Applied Physics, American Institute of Physics, 1998, 84, pp.4273-4280. ⟨in2p3-00016662⟩

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