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Dose effects during solid phase epitaxial regrowth of boron implanted, germanium amorphized silicon induced by rapid thermal annealing

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http://hal.in2p3.fr/in2p3-00017456
Contributor : Yvette Heyd <>
Submitted on : Tuesday, September 26, 2000 - 3:47:28 PM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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W.O. Adekoya, M. Hage-Ali, J.C. Muller, P. Siffert. Dose effects during solid phase epitaxial regrowth of boron implanted, germanium amorphized silicon induced by rapid thermal annealing. Applied Physics Letters, American Institute of Physics, 1988, 53, pp.511. ⟨in2p3-00017456⟩

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