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On the kinetics of solid phase regrowth and dopant activation during rapid thermal annealing of implantation amorphized silicon

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http://hal.in2p3.fr/in2p3-00017459
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Tuesday, September 26, 2000 - 3:50:09 PM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00017459, version 1

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W.O. Adekoya, M. Hage-Ali, J.C. Muller, P. Siffert. On the kinetics of solid phase regrowth and dopant activation during rapid thermal annealing of implantation amorphized silicon. Journal of Applied Physics, American Institute of Physics, 1988, 64, pp.666. ⟨in2p3-00017459⟩

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