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High quality silicon-on-insulator structures formed by oxygen implantation and annealing

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http://hal.in2p3.fr/in2p3-00017507
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Wednesday, September 27, 2000 - 9:54:39 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00017507, version 1

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D.P. Vu, Marjorie Haond, C. d'Anterroches, J.C. Oberlin, A. Golanski, et al.. High quality silicon-on-insulator structures formed by oxygen implantation and annealing. Applied Physics Letters, American Institute of Physics, 1988, 52, pp.819. ⟨in2p3-00017507⟩

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