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Electron diffusion length in rapid thermal processed p-type silicon

Thuong-Quat Vu W. Eichhammer P. Siffert 1
1 IReS - Institut de Recherches Subatomiques
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http://hal.in2p3.fr/in2p3-00017508
Contributor : Yvette Heyd <>
Submitted on : Wednesday, September 27, 2000 - 10:05:14 AM
Last modification on : Thursday, April 23, 2020 - 2:26:19 PM

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  • HAL Id : in2p3-00017508, version 1

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Thuong-Quat Vu, W. Eichhammer, P. Siffert. Electron diffusion length in rapid thermal processed p-type silicon. Applied Physics Letters, American Institute of Physics, 1988, 53, pp.11928. ⟨in2p3-00017508⟩

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