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Comment on 'Atomic Model' for the EL2 Defect in GaAs

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http://hal.in2p3.fr/in2p3-00017510
Contributor : Yvette Heyd Connect in order to contact the contributor
Submitted on : Wednesday, September 27, 2000 - 10:11:23 AM
Last modification on : Wednesday, February 17, 2021 - 3:26:04 PM

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  • HAL Id : in2p3-00017510, version 1

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Zou Yuanxi, Wang Guangyu, S. Benakki, A. Goltzene, C. Schwab. Comment on 'Atomic Model' for the EL2 Defect in GaAs. Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1988, 38, pp.10953. ⟨in2p3-00017510⟩

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